Integra Technologies, a manufacturer of high-voltage GaN RF power devices for high-power microwave and RF amplification applications has developed a range of solid-state RF power transistors and amplifier pallets delivering up to 8 kW of output power with efficiency levels of up to 80%. The portfolio includes multi-kilowatt devices operating across frequencies from approximately 0.96 GHz to 3 GHz, with specified pulse widths, duty cycles, voltage ratings up to 125 V, and gain values ranging from 15 dB to 21 dB depending on the model.
Listed products include models such as IGN1030S5000 and IGN0912S5000, each rated at 5,000 W with 19 dB typical gain and typical efficiencies of 73% and 75%, respectively, operating at 125 V with 32 µs pulse width and 4% duty cycle. Other models, including IGN1300S3600 and IGN1011S3600, are rated at 3,600 W with typical efficiencies between 63% and 70%, operating at 100 V with pulse widths of 10 µs to 32 µs and duty cycles from 1% to 4%.
Lower power variants in the portfolio include the IGN3000S2700 at 2,700 W and the IGN0912M2400 at 2,400 W, with voltage options of 125 V and 75 V, respectively. Additional devices such as IGN1214M1600 and IGN2425S1500 provide 1,600 W and 1,500 W output levels. Matching configurations across the lineup include input-only and input-and-output matched options.
The portfolio addresses applications across directed energy systems, high-power microwave systems, civil and defense radar, agriculture, fusion plasma control, and particle accelerators. The portfolio combines high-voltage operation, multi-kilowatt output capability, and defined pulse performance parameters across a range of frequency bands and power levels.
Click here for more details on Integra’s GaN RF portfolio.
