K-PA, a fabless RF semiconductor company from Korea, has developed the KX2-2046, an X-band GaN-on-SiC MMIC power amplifier that operates from 8.0 to 11.5 GHz. It delivers a typical saturated output power of 20 W with 26 dB of linear gain and achieves a high power-added efficiency (PAE) of 46-51% depending on drain bias conditions. The amplifier is built using a true single-side assembly architecture that simplifies integration and improves manufacturing efficiency, positioning it as a strong candidate for next-generation radar systems requiring both power density and ease of deployment.
The KX2-2046 has been developed using a true single-side assembly architecture, which provides several manufacturing and integration advantages:
- All matching and bias components on one side only
- No backside processing or complex routing
- Reduced assembly steps and tuning effort
- Improved manufacturing yield and repeatability
- Faster time-to-production for RF power modules
The KX2-2046’s architectural approach simplifies integration, as the amplifier is internally matched to 50 ohms and includes DC blocking capacitors on both RF input and output ports. The amplifier operates on a 28 V DC supply and draws 0.3 A of current. It is also 100% DC and RF tested at the wafer level, ensuring performance consistency before deployment. The device is supplied in chip package format, providing designers with the flexibility needed for module integration.
K-PA is a fabless RF semiconductor company specializing in GaN-on-SiC power amplifiers for defense, aerospace, radar, satellite communications, and electronic warfare systems. K-PA delivers high-efficiency, wideband, and highly reliable MMIC solutions that meet the stringent demands of modern mission-critical platforms.
