Fill one form and get quotes for cable assemblies from multiple manufacturers
Note : Your request will be directed to MACOM.
The CGHV35060MP from MACOM is a GaN HEMT that operates from 2700 MHz to 3500 MHz. This transistor is available in a small 6.5mm x 4.4mm plastic surface mount (SMT) package. This transistor provides an output power of over 75 Watts with a gain of more than 13.8 dB and efficiency of over 61% through the band. It is ideal for S Band Radars and LTE base stations.
400 W GaN Asymmetric Doherty Power Transistor from 1.8 to 2.2 GHz for Base Station Applications
300 W GaN-on-SiC HEMT Power Transistor from 2.4 to 2.5 GHz
400 W GaN Asymmetric Doherty Power Transistor from 2620 to 2690 MHz
Create an account on everything RF to get a range of benefits.
By creating an account with us you agree to our Terms of Service and acknowledge receipt of our Privacy Policy.
Login to everything RF to download datasheets, white papers and more content.