MicroWave Technology, Inc. (MwT) was founded in 1982. They manufacture discrete Gallium Arsenide diodes and transistors (FETs, pHEMTs, and Gunn Diodes). They have taken advantage of the low intermodulation distortion characteristics of GaAs FETs, to develop a product line of small internally matched modular surface mount transmit and receive amplifier modules aimed at multi-carrier and/or digitally modulated (high linearity) wireless infrastructure and military communication systems. They have a 35,000 square foot facility with a GaAs semiconductor fab and a hybrid chip and wire microwave integrated circuit (HMIC) manufacturing facility.
