RRP27312K5-30

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The RRP27312k5-30 from RFHIC is a GaN Pulse Power Amplifier that operates from 2.7 to 3.1 GHz. It provides an output pulse power of 2800 W with a gain of 30 dB (±0.5 dB, max) and offers a high efficiency of 40%. This HEMT amplifier has a duty cycle of 5%, a pulse width of from 1 to 100 µs and a rise/fall time of less than 100 ns. It has an amplitude pulse droop of 0.5 dB, a phase deviation of ±20° and switching time of less than 0.5 µs.

The RRP27312k5-30 is available in a pallet-shaped module that measures 175 x 234 x 24 mm with SMA-Female input and N-type (Female) output connector. It has been designed for radar applications that include Weather Radar, Air Traffic Control Radar, Surveillance Ground Radar, Meteorological Radar and Early Detection Radar.

Product Specifications

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Product Details

  • Part Number
    RRP27312K5-30
  • Manufacturer
    RFHIC
  • Description
    2800 W GaN Pulsed Power Amplifier from 2.7 to 3.1 GHz

General Parameters

  • Type
    Power Amplifier
  • Configuration
    Module with Connector
  • Industry Application
    Radar
  • Frequency
    2.7 to 3.1 GHz
  • Power Gain
    30 dB
  • Gain Flatness
    +/- 0.5 dB
  • Grade
    Commercial, Military, Space
  • Input Power
    34.5 dBm
  • Input Power
    2.81 W
  • PAE
    40%
  • Impedance
    50 Ohms
  • Pulsed/CW
    Pulsed
  • Pulse Width
    100 µsec
  • Duty Cycle
    10%
  • Rise Time
    100 ns
  • Fall Time
    100 ns
  • VSWR
    29:01:00
  • Sub-Category
    GaN Amplifier, Pulsed Amplifier
  • Harmonics
    40 dBc
  • Spurious
    70 dBc
  • Pulse Droop
    0.5 to 1 dB
  • Switching Time
    0.5 us
  • Supply Voltage
    50 V
  • Technology
    SiC HEMT
  • Dimensions
    175 x 234 x 25 mm
  • Connectors
    SMA, SMA - Female, N Type, N Type - Female
  • Input Connector
    SMA - Female
  • Output Connector
    N Type - Female
  • Weight
    2.5 kg
  • Operating Temperature
    -20 to 85 Degree C
  • Storage Temperature
    -40 to 125 Degree C
  • RoHS
    Yes

Technical Documents