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HVV0912-150

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The HVV0912-150 from Advanced Semiconductor, Inc. is a RF Transistor with Frequency 960 MHz to 1.21 GHz, Power 51.76 dBm, Power(W) 150 W, Duty_Cycle 0.1, Gain 20 dB. Tags: Flanged. More details for HVV0912-150 can be seen below.

Product Specifications

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Product Details

  • Part Number
    HVV0912-150
  • Manufacturer
    Advanced Semiconductor, Inc.
  • Description
    960 MHz to 1.21 GHz, 150 W Transistor for Pulsed Avionics Applications

General Parameters

  • Transistor Type
    MOSFET
  • Technology
    Si
  • Application Industry
    Aerospace & Defence
  • Application
    L Band
  • CW/Pulse
    Pulse
  • Frequency
    960 MHz to 1.21 GHz
  • Power
    51.76 dBm
  • Power(W)
    150 W
  • Pulsed Width
    10 us
  • Duty_Cycle
    0.1
  • Gain
    20 dB
  • Power Gain (Gp)
    18 to 20 dB
  • Power Added Effeciency
    0.43
  • Input Return Loss
    -7 to -3.5 dB
  • VSWR
    20.00:1
  • Class
    AB
  • Supply Voltage
    50 V
  • Threshold Voltage
    0.7 to 1.7 V
  • Input Power
    5 W
  • Drain Gate Voltage
    0.7
  • Breakdown Voltage - Drain-Source
    95 to 102 V
  • Drain Efficiency
    0.43
  • Drain Bias Current
    1.7
  • Drain Leakage Current (Id)
    50 to 100 uA
  • Gate Leakage Current (Ig)
    10 to 100 nA
  • Junction Temperature (Tj)
    200 Degree C
  • Thermal Resistance
    0.13 Degree C/W
  • Package Type
    Flanged
  • RoHS
    Yes
  • Storage Temperature
    -40 to 150 Degree C
  • Note
    Rise Time : 17 to 50 nS, Fall Time : 27 to 50 nS, Pulse Droop : 0.5 to 0.25 dB, Gate QuiesCent Voltage : 1.1 to 1.45 V

Technical Documents
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