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The CGHV31500F1 from MACOM is an S-Band GaN HEMT that operates from 2.7 to 3.1 GHz. It delivers a saturated output power of 500 W with a small-signal gain of 14.5 dB and drain efficiency of up to 71%. The transistor is based on Wolfpeed’s high power density 50 V, 0.4 μm GaN on silicon carbide (SiC) manufacturing process. It has been developed with long pulse capability to meet the developing trends in radar architectures. The device has a maximum pulse width of 2000 μS with a duty cycle of 20%. It is available in a ceramic/metal flange package of type 440226 and is ideal for civil and military pulsed radar amplifier applications.
400 W GaN Asymmetric Doherty Power Transistor from 1.8 to 2.2 GHz for Base Station Applications
300 W GaN-on-SiC HEMT Power Transistor from 2.4 to 2.5 GHz
400 W GaN Asymmetric Doherty Power Transistor from 2620 to 2690 MHz
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