The BFR840L3RHESD from Infineon is a discrete RF heterojunction bipolar transistor (HBT) with integrated ESD protection suitable for applications in the 5 GHz band. It provides an OIP3 of 18 dBm with a gain of 22 dB, and a noise figure of 0.65 dB at 5.5 GHz. The transistor is available in a low profile and small form factor leadless package and is suitable for WLAN 2.4 GHz / 5-6 GHz bands, WiMAX & UWB, Satellite Radio (SDARs, DAB) and navigation systems (GPS, Glonass, Beidou, and Galileo) applications.
