1. everything RF
  2. RF Components
  3. Transistors
  4. Transistors
  5. Integra Technologies, Inc.
  6. IGN1012S1000

IGN1012S1000

Download Datasheet
Request Quote

Note : Your request will be directed to Integra Technologies, Inc..

IGN1012S1000 Image

The IGN1012S1000 from Integra Technologies, Inc. is a RF Transistor with Frequency 1.025 to 1.150 GHz, Power 60 dBm, Power(W) 1000 W, Duty_Cycle 0.02, Gain 16 dB. Tags: Flanged. More details for IGN1012S1000 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    IGN1012S1000
  • Manufacturer
    Integra Technologies, Inc.
  • Description
    1.025 to 1.150 GHz, HEMT Transistor

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Industry
    Aerospace & Defence, Avionics
  • Application
    L Band
  • CW/Pulse
    Pulse
  • Frequency
    1.025 to 1.150 GHz
  • Power
    60 dBm
  • Power(W)
    1000 W
  • Pulsed Width
    32 us
  • Duty_Cycle
    0.02
  • Gain
    16 dB
  • Power Gain (Gp)
    15 to 17.5 dB
  • Supply Voltage
    50 V
  • Threshold Voltage
    -2.8 V
  • Quiescent Drain Current
    70 to 80 mA
  • Package Type
    Flanged
  • Package
    Ceramic
  • Operating Temperature
    -55 to 200 Degree C
  • Storage Temperature
    -55 to 150 Degree C

Technical Documents
View similar products