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RD07MVS1

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The RD07MVS1 from Mitsubishi Electric US, Inc. is a RF Transistor with Frequency 175 to 520 MHz, Power 38.45 to 39.03 dBm, Power(W) 8 W, Gain 10 dB, Supply Voltage 7.2 V. Tags: Flanged. More details for RD07MVS1 can be seen below.

Product Specifications

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Product Details

  • Part Number
    RD07MVS1
  • Manufacturer
    Mitsubishi Electric US, Inc.
  • Description
    175 to 520 MHz, MOSFET Transistor

General Parameters

  • Transistor Type
    MOSFET
  • Technology
    Si
  • Application Industry
    Wireless Infrastructure, Broadcast
  • Application
    Mobile, Radio
  • CW/Pulse
    CW
  • Frequency
    175 to 520 MHz
  • Power
    38.45 to 39.03 dBm
  • Power(W)
    8 W
  • Gain
    10 dB
  • Supply Voltage
    7.2 V
  • Threshold Voltage
    1.4 to 2.4 V
  • Input Power
    0.3 to 0.7 W
  • Drain Bias Current
    0.2 mA
  • Quiescent Drain Current
    750 mA
  • Package Type
    Flanged
  • RoHS
    Yes
  • Storage Temperature
    -40 to 125 Degree C

Technical Documents
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