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  6. MMRF1018N

The MMRF1018N from NXP Semiconductors is a RF Transistor with Frequency 470 to 860 MHz, Power 49.54 dBm, Power(W) 89.95 W, P1dB 49.5 dBm, Duty_Cycle 0.1. Tags: Flanged. More details for MMRF1018N can be seen below.

Product Specifications

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Product Details

  • Part Number
    MMRF1018N
  • Manufacturer
    NXP Semiconductors
  • Description
    Broadband RF Power LDMOS Transistor, 470-860 MHz, 90 W, 50 V

General Parameters

  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    Wireless Infrastructure, Aerospace & Defence, Radar
  • Application
    HF, VHF, UHF, Radar, OFDM
  • CW/Pulse
    Pulse, CW
  • Frequency
    470 to 860 MHz
  • Power
    49.54 dBm
  • Power(W)
    89.95 W
  • CW Power
    18 to 90 W
  • P1dB
    49.5 dBm
  • Pulsed Width
    100 us
  • Duty_Cycle
    0.1
  • Power Gain (Gp)
    21 to 24 dB
  • Input Return Loss
    -14 to -9 dB
  • VSWR
    10.00:1
  • Supply Voltage
    50 V
  • Threshold Voltage
    0.9 to 2.4 Vdc
  • Breakdown Voltage - Drain-Source
    120 V
  • Voltage - Gate-Source (Vgs)
    -6 to 10 Vdc
  • Drain Efficiency
    0.285
  • Drain Current
    350 mA
  • Impedance Zs
    50 Ohms
  • Thermal Resistance
    0.79 °C/W
  • Package Type
    Flanged
  • Package
    TO--270WB--4 PLASTIC
  • RoHS
    Yes
  • Operating Temperature
    150 Degree C
  • Storage Temperature
    -65 to 150 Degree C

Technical Documents
View details on the manufacturer's website
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