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GX4441

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GX4441 Image

The GX4441 from Polyfet RF Devices is a RF Transistor with Frequency 1 MHz to 3 GHz, Power 50 dBm, Power(W) 100 W, Power Gain (Gp) 12 dB, VSWR 10.0:1. Tags: Flanged. More details for GX4441 can be seen below.

Product Specifications

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Product Details

  • Part Number
    GX4441
  • Manufacturer
    Polyfet RF Devices
  • Description
    100 W, GaN on SiC HEMT Power Transistor

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Industry
    Wireless Communication
  • Frequency
    1 MHz to 3 GHz
  • Power
    50 dBm
  • Power(W)
    100 W
  • Power Gain (Gp)
    12 dB
  • VSWR
    10.0:1
  • Breakdown Voltage - Drain-Source
    250 V
  • Voltage - Drain-Source (Vdss)
    48 V
  • Voltage - Gate-Source (Vgs)
    -8 to 2 V
  • Drain Efficiency
    0.6
  • Drain Bias Current
    4 mA
  • Quiescent Drain Current
    0.3 A
  • Power Dissipation (Pdiss)
    125 W
  • Feedback Capacitance
    0.8 pF
  • Input Capacitance
    13 pF
  • Junction Temperature (Tj)
    200 Degree C
  • Output Capacitance
    7 pF
  • Thermal Resistance
    2.4 Degree C/W
  • Package Type
    Flanged
  • RoHS
    Yes
  • Storage Temperature
    -65 to 150 Degree C

Technical Documents
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