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LB803

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LB803 Image

The LB803 from Polyfet RF Devices is a RF Transistor with Frequency 1 to 1000 MHz, Power 49 dBm, Power(W) 80 W, Power Gain (Gp) 12 dB, VSWR 10.0:1. Tags: Flanged. More details for LB803 can be seen below.

Product Specifications

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Product Details

  • Part Number
    LB803
  • Manufacturer
    Polyfet RF Devices
  • Description
    80 W, Si LDMOS Power Transistor

General Parameters

  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    Aerospace & Defence, Broadcast, Wireless Infrastructure
  • Application
    Radio, Cellular, Base Station, MRI Systems
  • Frequency
    1 to 1000 MHz
  • Power
    49 dBm
  • Power(W)
    80 W
  • Power Gain (Gp)
    12 dB
  • Transconductance
    2.4 MOhms
  • VSWR
    10.0:1
  • Drain Gate Voltage
    70 V
  • Breakdown Voltage - Drain-Source
    65 V
  • Voltage - Drain-Source (Vdss)
    28 V
  • Voltage - Gate-Source (Vgs)
    30 V
  • Drain Efficiency
    0.55
  • Drain Current
    11.9 A
  • Drain Bias Current
    3 mA
  • Quiescent Drain Current
    1.2 A
  • Gate Leakage Current (Ig)
    1 uA
  • Power Dissipation (Pdiss)
    200 W
  • Feedback Capacitance
    3 pF
  • Input Capacitance
    90 pF
  • Junction Temperature (Tj)
    200 Degree C
  • Output Capacitance
    45 pF
  • Thermal Resistance
    0.75 Degree C/W
  • Package Type
    Flanged
  • RoHS
    Yes
  • Storage Temperature
    -65 to 150 Degree C

Technical Documents
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