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PD55003-E

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The PD55003-E from STMicroelectronics is a RF Transistor with Frequency 520 to 860 MHz, Power 34.77 dBm, Power(W) 3 W, Power Gain (Gp) 14 to 17 dB, Efficiency 45 to 52%. Tags: Surface Mount. More details for PD55003-E can be seen below.

Product Specifications

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Product Details

  • Part Number
    PD55003-E
  • Manufacturer
    STMicroelectronics
  • Description
    3 W, LDMOS / MOSFET RF Transistor from 520 to 860 MHz

General Parameters

  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    Broadcast, Commercial, Wireless Infrastructure
  • Application
    Commercial, Industrial, Radio
  • CW/Pulse
    CW
  • Frequency
    520 to 860 MHz
  • Power
    34.77 dBm
  • Power(W)
    3 W
  • Power Gain (Gp)
    14 to 17 dB
  • Efficiency
    45 to 52%
  • VSWR
    20.00:1
  • Supply Voltage
    12.5 to 15.5 V
  • Voltage - Drain-Source (Vdss)
    40 V
  • Voltage - Gate-Source (Vgs)
    ±20 V
  • Current
    50 mA
  • Drain Current
    2.5 A
  • Drain Leakage Current (Id)
    1 uA
  • Gate Leakage Current (Ig)
    1 uA
  • Power Dissipation (Pdiss)
    31.7 W
  • Feedback Capacitance
    2.4 pF
  • Input Capacitance
    36 pF
  • Junction Temperature (Tj)
    165 Degree C
  • On Resistance
    0.75 Ohms
  • Output Capacitance
    24 pF
  • Thermal Resistance
    3 Degree C/W
  • Package Type
    Surface Mount
  • Grade
    Commercial
  • Storage Temperature
    -65 to 150 Degree C
  • Tags
    IDEV Series
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