Applying GaN Devices in High Reliability and Space Applications for Maximum Performance and Reliability

There is a lot of interest in the application of GaN HEMT power devices in high reliability and space power supplies, and given their excellent performance characteristics (ultra-high speed switching times, low gate charge and low ON resistance) these devices are the natural technology progression in relation to conventional silicon MOSFET devices. But since this is a new technology there are some misconceptions regarding their robustness and reliability general acceptance of these deicves in high reliability and space applications has been coming slow.

This application note is intended to show how MiGaN power transistors housed in the innovative U4A package can be used in high reliability and high performance DC-DC conversion circuits, and to help change the perception of these game changing devices.