Withwave Introduces New Cryogenic Low-Noise Amplifier for C-Band Applications

Withwave Introduces New Cryogenic Low-Noise Amplifier for C-Band Applications

Withwave has introduced a new Cryogenic Low-Noise Amplifier that uses InP HEMT (High Electron Mobility Transistor) technology and offers high gain with low noise figure characteristics (NF: 0.04~0.05 dB) for C-Band applications from 4 to 8 GHz). This LNA is tested and verified using Withwave’s 4 K cryogenic measurement system and can be used in applications like quantum computing, Radio Astronomy and space communications. 

Features of the new Cryogenic Low-Noise Amplifier:

  • Frequency Range: 4 - 8 GHz
  • Very Low Noise Figure (NF): 0.04 - 0.05 dB
  • InP HEMT Technology
  • Operation at Cryogenic Temperatures

Click here to learn more about the new cryogenic low-noise amplifier from Withwave.

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Publisher: everything RF