Teledyne HiRel Semiconductors has released its cutting-edge Gallium Nitride (GaN) high-power RF switch, the TDSW84230EP, designed specifically for high-reliability aerospace and defense applications. This new switch delivers exceptional performance, replacing traditional Positive-Intrinsic-Negative (PIN) diode-based RF switches commonly found in military communication radio systems.
This Single Pole Double Throw (SPDT) reflective switch operates over a wide frequency range from 30 MHz to 5 GHz. Built on a wide-bandgap GaN High Electron Mobility Transistor (HEMT) process, the switch offers:
- High Power Handling: Up to 20 watts continuous wave (CW).
- Low Insertion Loss: As low as 0.2 dB for optimal signal integrity.
- High Port Isolation: Up to 45 dB for reduced interference.
- Wide Operating Temperature Range: Qualified for extreme conditions from –55°C to 125°C.
Packaged in a compact 16-pin quad-flat no-lead (QFN) 3mm x 3mm x 0.8mm surface-mount package, this switch ensures significant board space and efficiency savings compared to traditional PIN diode architectures.
“This high-power GaN switch is an ideal solution for replacing PIN diode switches in today’s military software-defined radios,” said Mont Taylor, Vice President and Business Development Manager at Teledyne HiRel. “The switch supports wideband continuous operation while offering higher voltage RF-power handling and better harmonic performance, meeting the stringent requirements of modern defense applications.”
Availability
The TDSW84230EP is available now through Teledyne HiRel Semiconductors and authorized distributors. Devices are shipped from Teledyne HiRel’s DoD Trusted Facility in Milpitas, California.
Click here to learn more about TDSW84230EP from Teledyne.
