Qorvo has announced that their 15W GaN on SiC wideband input-matched transistor (QPD1000) has completed stringent environmental testing, demonstrating its reliability for use in defense and emergency response communications equipment. The QPD1000 recently passed JEDEC's JESD22- A110D Highly Accelerated Temperature/Humidity Stress Test (HAST), proving its reliability in harsh environmental conditions, including severe temperature, humidity and bias.
HAST measures a device at 130 degrees Celsius, 85 percent relative humidity and high atmospheric pressure for a minimum of 96 hours. Additional testing is ongoing, demonstrating its ability to exceed the industry standard test.
This wideband input-matched GaN transistor operates from 30 MHz to 1215 MHz. It is available in a low-cost, space-saving surface-mount plastic DFN package with integrated matching. The transistor provides wideband gain and power performance along with high efficiency. The output can be matched on the board to optimize power and efficiency for any region within the band. It can be used in continuous wave and pulsed signals for defense and public safety communications applications.
Since 1999, Qorvo has been driving GaN research and innovation, offering proven GaN circuit reliability and compact, highly efficient products. They are a Defense Manufacturing Electronics Agency accredited 1A Trusted Source, having completed the Defense Production Act Title III GaN on SiC program in 2014. Qorvo remains the only GaN supplier to have achieved Manufacturing Readiness Level (MRL) 9.
Qorvo's GaN products will be showcased at Booth 839 at the IEEE International Microwave Symposium (IMS), from May 24-26 in San Francisco, California.
