NXP Semiconductors has expanded their portfolio of broadband GaN RF power transistors for electronic warfare and battlefield radio applications. This expansion includes six new driver or final-stage amplifiers that have frequency coverage from 1 to 3000 MHz.
The new GaN on SiC transistors combine high power density, ruggedness, and a very flat frequency response over wide bandwidths. All the transistors are input matched to optimize the operating frequency range, and can withstand a VSWR greater than 20:1 with 3 dB overdrive without degradation. These are also part of NXP's Product Longevity Program, which ensures a stable supply of products for up to 15 years from the time of launch.
The transistors cover a broard frequency range from the HF to S Band enabling them to cover virtually all frequencies used by radios or the lower-frequency sections of electronic systems. This reduces the number of RF power transistors required to build an amplifier with a specific RF output level, which decreases amplifier size and bill of materials.
The new transistors include:
- MMRF5011N (28V) and MMRF5013N (50V): operate from 1 to 3000 MHz with RF output power up to 12 W CW, 15 dB gain, and 60% efficiency, housed in an OM-270-8 over-molded plastic package
- MMRF5015NR5: operates from 1 to 2700 MHz with RF output power up to 125 W CW, gain of 16 dB, and efficiency of 64%, housed in an OM-270-2 over-molded plastic package
- MMRF5019N: operates from 1 to 3000 MHz with RF output power up 25 W CW, gain of 18 dB, and efficiency of 40%, housed in an OM-270-8 over-molded plastic package
- MMRF5021H: operates from 1 to 2700 MHz with RF output power up to 250 W CW, 16 dB gain, and 58% efficiency, housed in a NI-780H-4L air-cavity ceramic package
- MMRF5023N: operates from 1 to 2700 MHz with RF output power up to 63 W CW, 16 dB gain, and 60% efficiency, housed in an OM-270-2 over-molded plastic package
These new transistors join the expanding portfolio of RF power transistors from NXP and are ideal for defense systems that operate in HF, VHF, UHF, and L-band radar, IFF transponders and avionics systems.
These new GaN transistors are either sampling or already in production.
NXP Semiconductors showcased these transistors at the International Microwave Symposium, May 24-26, in San Francisco.
