StratEdge Corporation, a leader in the design, production, and assembly of high-frequency and high-power semiconductor packages for microwave, millimeter-wave, and high-speed digital devices, has announced its assembly services for attaching gallium nitride (GaN) and other high-frequency, high-power devices using gold-tin (AuSn) and gold-silicon (AuSi) onto copper-molybdenum-copper (CMC) tabs. StratEdge’s proprietary eutectic die attach method maximizes the power output a chip can achieve, optimizing its performance and providing an efficient way to dissipate heat to avoid overheating and failures during normal operation.
StratEdge uses the latest high-volume automated system in a cleanroom environment to perform eutectic AuSn die attach of compound semiconductor devices that have a backside gold surface finish. The bonder has micron placement accuracy. Solder preforms are matched to the size of the die to reduce solder bond line thickness to less than 6µm, maximizing power output for GaN devices, lowering junction temperatures, and increasing device reliability. For silicon devices, a AuSi eutectic die attach method is used to create a reliable solder joint with excellent thermal dissipation.
GaN on CMC is ideal for chip-on-board (COB) applications because organic boards cannot withstand the eutectic die attach temperature. Eutectic die attach is a highly controlled die attach process that provides void-free, high-reliability, high-accuracy chip attachment. The chip’s performance benefits from the superior thermal characteristics of the CMC heat spreader before the chip is installed onto the board. StratEdge provides the service along with the custom-built CMC tabs, which allows the chip to be placed directly on a layer of high thermally conductive copper.
StratEdge will be exhibiting at the 2019 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) in Booth 10. BCICTS is being held at the Loews Vanderbilt Hotel, Nashville, TN, from November 3-6.
