Integration of Silicon with Passive Devices Yields Advantages in Wireless Design
High Frequency Electronics, Helic S.A. , Atmel Corp.
- Author:
Robert J. Zavrel Jr. and Sotiris Bantas, and Ron Wood,
The wireless market presents conflict-ing demands to the RF system developer. Multi-band and multi-mode operation must be provided with improved RF performance, using less power, in a highly integrated form factor and, of course, at a lower system cost. These conflicting demands may be realized through the fusion of high quality, high tolerance RF passive components configured from package interconnects as well as metalization layers in advanced silicon processes such as RF CMOS and SiGe BiCMOS. This paper presents a brief overview of a unique approach to complex RF designs, employing a passives-based design methodology aided by specialized EDA tools.
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