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Mitsubishi Electric has a diverse portfolio of RF Semiconductor products based on GaAs, Silicon and GaN.
Ka-Band GaN MMIC Power Amplifier from 27.5 to 31.0 GHz
125 W GaN Power Amplifier from 3.3 to 3.8 GHz for 5G Massive MIMO Base Stations
520 MHz, 6.5 W Silicon Power MOSFET for VHF/UHF Radio Applications
63 W GaN Power Amplifier from 3.4 to 3.8 GHz for 5G mMIMO Applications
70 W GaN HEMT from 12.75 to 13.25 GHz for SATCOM Applications
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