Mitsubishi Electric Introduces 6.5W Silicon RF High-power MOSFET for Commercial Handheld Two-way Radios

Mitsubishi Electric Introduces 6.5W Silicon RF High-power MOSFET for Commercial Handheld Two-way Radios

Mitsubishi Electric Corporation has announced that it will begin shipping samples of its new 6.5 W silicon radio-frequency (RF) high-power metal-oxide semiconductor field-effect transistor (MOSFET) for use in RF high-power amplifiers of commercial handheld two-way radios (walkie-talkies) on 28 February. The model, which achieves an output power of 6.5 W from a 3.6 V single-cell lithium-ion battery, is expected to extend the range and reduce the power consumption of commercial radio equipment.

With the growing popularity of 3.6 V lithium-ion batteries in smartphones, the commercial radio industry has been expected to develop higher-power products using these batteries, which are less expensive than conventional 7.2 V batteries. But until now, the use of 3.6V batteries resulted in reduced output power for commercial radio amplifiers which require higher output than smartphones, so the market has been waiting for MOSFETs capable of increasing the output power of 3.6 V batteries.

In response, Mitsubishi Electric has now developed a high-power silicon MOSFET (RD06LUS2) that achieves unmatched power output and high drain efficiency for commercial radios operating at 3.6 V. In addition, a package containing two of these MOSFET chips can save space on printed circuit boards for commercial radios and contribute to lower assembly costs.

Key Features

  • 6.5 W output power for extended radio range
    • Power density is improved by reducing on-resistance with a structure optimized for 3.6 V operation.
    • Package containing two MOSFET chips achieves unmatched 6.5 W output power for 3.6 V radios.
    • Increased output power extends the communication range by up to 27% versus the existing model.
  • 65% drain efficiency realizes reduced power consumption
    • Optimization for 3.6 V operation achieves 65% drain efficiency.
    • Increased drain efficiency reduces radio power consumption, resulting in extended operating time.
  • Two-MOSFET package reduces footprint and assembly costs
    • A new package with two MOSFET chips reduces footprint by 33% compared to two single-chip products.
    • Compatibility with Surface Mount Technology (SMT) reduces package assembly costs.

Future Developments

The new RD06LUS2 MOSFET will be released this July. In addition, samples of a companion MOSFET driver (RD00LUS2) will be shipped in March before its release in August. Also, for support, a two-stage evaluation board equipped with the RD06LUS2 MOSFET and RD00LUS2 driver, along with a nonlinear simulation model, will be released in May.

Click here to learn more about the 6.5 W Silicon RF MOSFET.

Publisher: everything RF
Tags:-   TransistorMOSFET