RF components from Infineon Technologies have been integrated into the Galaxy S5 from Samsung. Infineon’s LTE LNAs and Quad LNA banks have been specially designed to enhance the data rate by up to 96 percent, making them a great choice for the LTE communication standard in smartphones. The GPS LNA ensures reliable navigation functionality by effectively preventing interference from other signals present in the phone. SPDT RF Switches have also been integrated into the Samsung device to reliably route RF signals. The latest model, S5 of Samsung Electronics’ is equipped with two internal Wi-Fi antennas and a Download Booster, which achieves outstanding transfer rates by combining the data transmission via LTE and Wi-Fi. More than 11 million units of the Android based phone were sold during the first month after the official release.
“The smartphone market shows unrivalled innovation speed. Being able to offer new product generations with higher integration and smaller footprint in next to no time is the key to success. We are proud to be chosen by leading players in this field like Samsung to help bring reliable service and more functionalities to the users,” said Philipp von Schierstaedt, Vice President and General Manager of the business unit RF & Protection Devices at Infineon Technologies.
The Samsung Galaxy S5 contains the following Infineon components:
LTE LNA (Low Noise Amplifier)
- BGA7L1N6
- BGA7M1N6
- BGA7H1N6
Quad-band LTE LNA bank
- BGM7MLLM4L12
- BGM7LLHM4L12
GPS LNA
- BGA824N6S
SPDT RF Switches
- BGS12PL6
- BGS12SL6
