WIN Semiconductors, one of the world’s largest pure-play compound semiconductor foundries has expanded its portfolio of RF GaN technologies with the release of a new gallium nitride (GaN) on silicon carbide (SiC) 0.12 μm-gate technology. The NP12-01 mmWave compound semiconductor technology provides increased gain and improved transistor stability factor. The NP12-01 technology is ideal for the high-power amplifiers used in 5G mmWave radio access networks, satellite communications, and radar systems.
Supporting full MMICs, the NP12-01 platform allows customers to develop compact linear or saturated power amplifiers up to 50 GHz. This process is qualified for 28 V operation, and in the 29 GHz band, generates saturated output power over 4 watts/mm with 13.5 dB linear gain and nearly 50% efficiency. When optimized for power added efficiency, NP12-01 provides over 3.5 watts/mm output power and greater than 50% PAE at 29 GHz.
Higher gain and power-added efficiency provided by the NP12-01 platform affords designers a larger trade-space to optimize amplifier performance and chip size to meet increasingly difficult specifications of current generation communication platforms and radar systems. Depending on the function, these high-performance applications require precise optimization of output power, linearity, gain, and efficiency, and a broad trade-space is crucial to balance amplifier performance and product cost.
WIN Semiconductors was at the IEEE International Microwave Symposium 2022, in Denver last week. Click here to see everything RF's exclusive coverage of the event.
Click here to learn more about GaN on SiC technology.
