Qorvo has introduced a high gain 100-watt L-band (1.2-1.4 GHz) compact GaN-on-SiC power amplifier module (PAM) for commercial and defense radar applications. The QPA2511 GaN-on-SiC PAM includes an integrated two-stage amplifier solution offering 60% power added efficiency in a circuit size 70% smaller than equivalent two-stage solutions. This unparalleled performance significantly reduces overall system power consumption.
The QPA2511 is available in a robust surface mount package to simplify system design, board assembly and testing. This helps optimize customer manufacturing cycles and improves reliability while accelerating time to market.
Doug Cole, general manager of Qorvo’s Defense and Aerospace business, said, “Qorvo consistently answers the challenge of providing unique, highly reliable and effective solutions using GaN-on-SiC technology for L-band and many other applications. Our decades of experience with defense programs and reputation for quality make us a preferred vendor for radar manufacturers in the U.S. and around the world.”
Frequency Range (GHz) | Output Power (Watt) | Gain (dB) | PAE (%) | Vd (V) | Pkg size (mm) |
1.2-1.4 | 100 | 29 | 60 | 50 | 25 x 12.5 |
The QPA2511 is available for sampling now for qualified customers.
Click here to learn more about the QPA2511 power amplifier from Qorvo.
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Click here to learn more about Qorvo’s GaN-on-SiC RF technology.
