Northrop Grumman has announced the worlds highest power Gallium Nitride (GaN) monolithic microwave integrated circuit (MMIC) power amplifier ever produced at Ka-band. With a peak power of 40 watts at 27 GHz, the 27-30 GHz amplifier has an average output power of 36 watts and a Power Added Efficiency (PAE) of greater than 30 percent across the band. The MMIC area is a compact 13.5 mm2 and establishes a new standard of performance achieved by a single MMIC.
This new 40-watt circuit was manufactured using the same process that is being matured through the company’s participation in the Air Force Research Laboratory Gallium Nitride Advanced Electronic Warfare Monolithic Microwave Integrated Circuit Producibility program, an initiative funded under Title III of the Defense Procurement Act.
“This is a big breakthrough for the industry because it will help lead the way to the widespread commercial availability of cost effective Ka-band GaN components with output powers exceeding 25 watts,” said Frank Kropschot, general manager, Microelectronics Products and Services, Northrop Grumman. “The commercial availability of high frequency, high power components will greatly reduce the cost and number of parts needed for communications equipment, making higher data rates and longer distance communication links more easily obtainable.”
“Designing this circuit was challenging because we aimed for a very small footprint for the amplifier and still had to give consideration to thermal concerns,” said Mansoor Siddiqui, a co-author of the paper along with Mike Wojtowicz “We managed to minimize output loss while achieving a good 18 dB load match in a small area. The PAE we have attained establishes a high mark while delivering 35-40 watts at Ka-band.”
Northrop Grumman’s paper on this achievement, entitled “High Power and High Efficiency Ka-band Power Amplifier” will be presented at IMS, Wednesday, May 20 at 10:10 a.m., in room 121 ABC, by Salah Din. More information will also be available at the Northrop Grumman IMS 2015 booth #2836.
