Freescale Semiconductor has introduced two ultra-wideband RF power gallium nitride (GaN) transistors in new advanced plastic packages. With these new packages and products, Freescale has made major advancements in its mission to unleash the true potential of GaN performance, and to provide the best-performing GaN devices in the industry. The new OM-270 package, offered in two-lead and eight-lead configurations, extends Freescale’s proprietary OMNI™ RF plastic packaging technology to the smallest outline yet, and adds compatibility with GaN.
The first two plastic RF power GaN transistors to take advantage of this advanced packaging technology are:
MMRF5015N: a 100W, 50V, true CW ultra-wideband GaN transistor ideally suited for high power military and civil communication systems. The MMRF5015N boasts a thermal resistance of less than 0.8°C/W, which represents a >30% improvement over competitive products. The MMRF5015N is sampling now in an evaluation fixture which demonstrates an unprecedented 200-2500 MHz bandwidth with a minimum of 12 dB gain and 40% efficiency over the entire band.
MMRF5011N: a 10W, 28V, true CW ultra-wideband transistor, demonstrating 200-2600 MHz bandwidth in an available applications circuit. Ideally suited for lower power military and civil handheld radio communications devices, the MMRF5011 is sampling now.
Two new products offer unprecedented RF PA bandwidth and thermal performance ideal for next generation military and civil communications applications. They are planned for volume production in Q3 2015, and are included in Freescale’s Product Longevity Program, as are all products in the RF Military portfolio.
These transistors can be seen at Freescale's Booth #3031 at the 2015 International Microwave Symposium from 19-21 May, 2015.
