WIN Semiconductors, the world’s largest pure-play compound semiconductor foundry, has announced the commercial release of a 50 V 0.25 µm-gate RF gallium nitride (GaN) platform, NP25-20, which targets high-performance front-end applications including radio access networks, satellite communications, electronic warfare, and radar systems. The NP25-20 technology supports full MMICs, enabling WIN customers to design compact, linear, or saturated high-power amplifiers, rugged low-noise amplifiers, and single-chip front-end solutions through 18 GHz.
The NP25-20 gallium nitride technology employs a source-coupled field plate for improved breakdown voltage and operates at a drain bias of 50 volts. This technology is fabricated on 100-mm silicon carbide substrates with through-wafer vias for low-inductance grounding. At X-band, NP25-20 demonstrates excellent transmit and receive performance with saturated output power of 10 watts/mm, 18 dB linear gain, and 60% power added efficiency. When biased for noise performance at 10 GHz, NP25-20 provides a minimum noise figure of 0.8 dB with a 12 dB associated gain. The combination of power density and superb noise figure from NP25-20 enables high-performance single-chip front ends without sacrificing transmit power or receiver sensitivity.
“The performance versatility of NP25-20 is unique for RF gallium nitride technology. A GaN MMIC platform with 10 watts/mm output power alone is an achievement. Combining surprising noise performance with high power switching in the same device creates a new toolset for customers to commercialize market-leading products for a wide range of applications,” said David Danzilio, Senior Vice President of WIN Semiconductors Corp.
WIN Semiconductors is showcasing its compound semiconductor RF and mm-wave solutions in booth #235 at the 2023 International Microwave Symposium being held at the San Diego Convention Center, June 13th through June 15th.
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