RFHIC has introduced three new cutting-edge GaN Wideband Power Amplifiers specifically designed for broadcasting, communications, and medical systems. These power amplifiers offer exceptional performance with an operating frequency range from 500 MHz to 3.0 GHz and 50 Watts of output power. The RWP15040-1H, RWP17050-1H, and RWP20050-1H amplifiers have been developed using RFHIC's advanced GaN-on-SiC high-electron-mobility transistors (HEMT) technology, which ensures high breakdown voltage, efficiency, and lower thermal dissipation. Furthermore, these devices come fully matched, making system integration a seamless process.
The RWP15040-1H operates in the frequency range of 500 to 2,500 MHz, delivering 50 Watts (~47 dBm) of output power with over 36 dB of gain. It has an ON/OFF switching time of less than 5 μs, making it highly responsive. This amplifier utilizes GaN-on-SiC technology and is mounted on an Aluminum sub-carrier material. With full in/out matching for enhanced broadband performance and improved thermal handling using patented technology, this power amplifier sets a new standard. It requires a DC supply of 32 V and consumes 1.2 A of current. The module dimensions are 72.0 x 50.8 x 16.8 mm, and it is equipped with SMA (female) connectors.
The RWP17050-1H operates in the frequency range of 700 to 2,700 MHz. It delivers an output power of 50 Watts (~47 dBm) with over 35 dB of gain. The amplifier has an ON/OFF switching time of less than 5 μs, ensuring a rapid response. Similar to the RWP15040-1H, this amplifier also utilizes GaN-on-SiC technology and is mounted on an Aluminum sub-carrier material. With full in/out matching and patented thermal handling technology, it guarantees outstanding performance. It requires a DC supply of 32 V and consumes 1.2 A of current. The module dimensions are 72.0 x 50.8 x 16.8 mm, and SMA (female) connectors are provided.
The RWP20050-1H has a frequency range of 1 to 3 GHz. It offers an output power of 50 Watts (~47 dBm) with over 35 dB of gain. The amplifier has an ON/OFF switching time of less than 5 μs, ensuring a rapid response in various applications. This amplifier utilizes GaN-on-SiC technology and is mounted on an Aluminum sub-carrier material. With full in/out matching and patented thermal handling technology, it guarantees exceptional performance. It requires a DC supply of 32 V and consumes 1.2 A of current. The module dimensions are 72.0 x 50.8 x 16.8 mm, and SMA (female) connectors are provided.
RFHIC's GaN Wideband Power Amplifiers open up new possibilities for broadcasting, communications, and medical systems. With their state-of-the-art technology and high-performance features, these amplifiers are poised to revolutionize the industry.
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