Analog Devices has introduced two new distributed MMIC power amplifiers that operate from 2 to 50 GHz. The HMC1127 and the HMC1126 are die's that simplify system design and improve performance by eliminating the need for RF switches between frequency bands. Each amplifier incorporates I/Os that are internally matched to 50 Ohms, facilitating easy integration into multi-chip modules. All data is taken with the chips connected via two 0.02-mm (1 mil) wire bonds measuring 0.31-mm (12 mils) in length. Based on a GaAs pHEMT (pseudomorphic high-electron mobility transistor) design, the HMC1126 and HMC1127 are ideal for instrumentation, microwave radio and VSAT antennas, aerospace and defense systems, telecommunications infrastructure, and fiber optic applications.
The HMC1127 provides a P1dB of 12.5 dBm, Saturated Power of 17.5 dBm with a gain of 14.5 dB. The amplifier requires a supply of 5 V and is available as a die that measures 2.7 x 1.45 x 0.1 mm. See Complete Specs.
The HMC1126 provides a P1dB of 17.5 dBm, Saturated Power of 21.5 dBm with a gain of 11 dB. The amplifier requires a supply of 5 V and is available as a die that measures 2.3 x 1.45 x 0.1 mm. See Complete Specs.
