RFHIC has introduced a high-performance, budget-friendly OptiGaN transistor series for 4G, 4G LTE, and Open RAN applications. OptiGaN represents transistors that are optimized for cost and performance. Designed as efficient, internally matched, asymmetrical GaN high-electron-mobility transistors (HEMT), the OptiGaN transistors are an ideal choice for users seeking to explore the advanced capabilities of GaN-on-SiC technology for their 4G, 4G LTE, and Open RAN systems without stretching their budget.
Applications include macro cell base stations, multi-carrier applications, distributed antenna systems, remote radio heads, and point-to-(multi) point links. Unlike other transistor technologies, GaN provides the following unique advantages that make it an ideal candidate for designing RF power amplifiers for 4G, 4G LTE and Open RAN applications:
- Excellent Thermal Stability
- High Power-Added Efficiency
- High Linearity
- Compact Design
Built with RFHIC's GaN-on-SiC technology, the OptiGaN transistors are a perfect fit for customers seeking high performance at a budget-conscious price for their 4G, 4G LTE, and Open RAN needs. Click here to learn more about the OptiGaN lineup from RFHIC.
