mmTron Introduces New GaN Power Amplifier MMIC Design for Ka-Band Satellite Uplink Applications

mmTron Introduces New GaN Power Amplifier MMIC Design for Ka-Band Satellite Uplink Applications

mmTron has added a new disruptive power amplifier (PA) design to their satellite communications (SATCOM) portfolio. Designed for the Ka-Band satellite uplink band, the TMC215 PA provides 45 W output power at P1dB with 24% power-added efficiency (PAE) from 27 to 31 GHz. The three-stage GaN MMIC delivers over 20 W of linear power with 19 dBc noise power ratio (NPR). The amplifier has small-signal gain of 23 dB and is well-matched to 50 ohms.

The TMC215 is available as die (5 mm x 4 mm x 0.1 mm) for integration in a multi-chip module, with on-chip DC blocking capacitors at input and output and built-in ESD protection. The bond pad and backside metallization are Au-based, ensuring compatibility with standard wire bonding and die attach methods.

It requires a drain bias of 28 V and draws 3 A of current, although the bias can be reduced to 18 V while maintaining 25 W output power with good PAE and linearity. The wide operating bandwidth, from 26 to 32 GHz, allows the TMC215 to be used for fixed wireless access links, 5G infrastructure, and test instrumentation.

An assembled evaluation module is available to help potential customers evaluate the PA.

Click here to learn more about mmTron's new linear power amplifier.

Publisher: everything RF
Tags:-   Power AmplifierGaNSatellite