RFHIC Corporation, a global leader in designing and manufacturing high-performance RF & Microwave components for defense, telecom, and RF Energy applications, plans to release of new line of GaN MMICs, low-noise amplifiers (LNA) and transistors.
Compared to GaAs MMICs, these GaN MMICs from RFHIC provide significant advancements, offering several benefits that make them preferable for various applications. GaN MMICs ensure higher power density capabilities than GaAs MMICs. This higher power density enables GaN devices to handle greater levels of RF power while maintaining efficiency and linearity.
GaN devices exhibit superior thermal properties compared to GaAs, leading to improved reliability and longevity. The inherent thermal conductivity of GaN allows for efficient dissipation of heat, reducing the risk of device failure due to overheating. This thermal robustness is particularly advantageous in demanding operating environments and extended usage scenarios. Furthermore, GaN MMICs offer broader bandwidth capabilities, enabling them to operate over a wider frequency range compared to GaAs MMICs.
GaN MMICs
RFHIC’s GaN MMICs are designed for operation in the C, X, Ku, K and Ka-band, delivering output power from 5 to 80 W. They will be available in surface-mount QFN, CM1012-6L, or CM1012-6L packaging options.
Part Number
| Minimum Freq. (GHz)
| Maximum Freq. (GHz)
| Psat (dBm)
| PAE (%)
| Vds (V)
| Package
|
|---|
M004P6
| 5.2
| 6.2
| 44.5
| 49
| 28
| QFN 6x6
|
M012C2C
| 9
| 10
| 42
| 38
| 28
| CM1016-6L
|
M011C2C
| 8.5
| 9.5
| 45
| 37
| 28
| CM1016-6L
|
M013C2C
| 10.7
| 12.7
| 40
| 37
| 28
| CM1016-6L
|
M015C1MH
| 12.5
| 17.5
| 39
| 38
| 20
| CM1012-6L
|
M017C2C
| 14.5
| 17
| 44.7
| 30
| 22.5
| CM1012-6L
|
M001C1C
| 15
| 17.5
| 47.8
| 34
| 22
| CM1016-6L
|
M018C2C
| 18
| 22
| 44.6
| 26
| 22.5
| CM1012-6L
|
M014C2C
| 27
| 29
| 36.5
| 22
| 28
| Development
|
M016C2C
| 29.5
| 30.5
| 40
| 15
| 28
| Development
|
Low Noise Amplifiers
RFHIC’s upcoming GaN low-noise amplifiers (LNAs) are designed for operation from L to Ka-band with noise figures in the range of 1 to 2.4 dB. They will be available in module (hermetic), QFN, or ceramic QFN packaging options. These LNAs are designed for wireless communications and defense applications including WiMax, repeaters, base stations, radar, jammers, EW, and RF Subsystems. Customized solutions are available upon customer request.
Part Number
| Minimum Freq. (GHz)
| Maximum Freq. (GHz)
| Noise Figure (dB)
| Vds (V)
| Idq (mA)
| Package
|
|---|
RRM1214-R1A
| 1.2
| 1.4
| 0.45
| 15
| 200
| Module
|
LCL3322-L
| 2.7
| 3.8
| 1.4
| 5
| 220
| CP-16B
|
WE327
| 0.5
| 7.2
| 1.8
| 5
| 120
| DFN 2x2
|
M008P5C
| 8
| 14
| 1 - 1.2
| 2
| 95
| QFN 5x5
|
M009P4C
| 15
| 23
| 1.3 - 1.7
| 2
| 50
| QFN 4x4
|
M010P5C
| 27
| 32
| 1.9 - 2.4
| 2
| 30
| QFN 5x5
|
Internally-Matched GaN Transistors
RFHIC’s new internally-matched GaN Transistors are designed for S, C and X-band operation, delivering an output power of up to 350 W. They will be available in air-cavity or hermetically-sealed packages and are suitable for wireless infrastructure applications in 4G LTE and 5G macro base stations.
Frequency
| S-Band
| C-Band
| X-Band
|
Power
| 350 W
| 200 W
| 120 W
|
Gain (typical)
| 12 dB
| 11 dB
| 8 dB
|
Package
| 18.0 x 10.2 mm (Air cavity or Hermetically-sealed package)
|
Expected Release
| 2024 2Q
|
These GaN MMIC families from RFHIC represent a significant leap forward in RF technology, offering an array of advantages over their GaAs counterparts. With higher power density capabilities, superior thermal properties and broader bandwidths, GaN MMICs stand as the preferred solution for high-performance RF applications, delivering excellent efficiency, reliability, and versatility.
Click here to view RF GaN Transistors from RFHIC on everything RF.
