Altum RF, a global provider of high-performance RF to millimeter-wave semiconductor solutions for next-generation markets and applications, will showcase its featured products and technical expertise at IMS2024, to be held in Washington, DC, USA. Attendees can visit Booth #510 at the Walter E. Washington Convention Center where Altum RF company leaders will answer questions about specific products, future plans and their decades of experience designing and delivering RF, microwave and millimeter-wave semiconductors.
Highlights of Featured Products Include:
GaAs-Based Q/V/E-Band Solutions: Low-Noise, Medium-Power, Up to 90 GHz
Altum RF’s lineup of broadband Q/V/E-band low-noise and medium-power amplifiers enable next-generation technology and high-capacity networks. Applications include test and measurement, SATCOM, and point-to-point wireless communication for 5G and 6G networks. These high-frequency amplifiers use advanced GaAs technology, which delivers low noise figures and linear amplification with less signal distortion at medium power.
Altum RF offers a wide range of components for SATCOM and radar applications. They design custom components, along with catalog products.
ARF1206/L5 E-Band LNA
Altum RF’s ARF1206 E-band low-noise amplifier is suitable for a variety of demanding telecommunications and sensing applications. It features 20 dB typical gain with 2.5-3.5 dB noise figure from 71-86 GHz and operates off a single 4V supply. It is pre-matched on the input and output to 50 Ω with integrated ESD-protection. This part is fabricated using GaAs technology and is also available in a 5 x 5 mm² surface mount package, the ARF1206L5.
- ARF1206: Bare Die
- ARF1206L5: 5 x 5 mm2 surface mount package
ARF1207 V-Band LNA/Driver/Medium Power Amplifier
ARF1207 is a linear, low-noise, medium-power, high-gain amplifier for V-band applications. The part is pre-matched to 50 ohm and is ESD-protected to simplify handling and assembly. The multistage amplifier has a single gate and single drain supply which can be connected from either side of the die for ease of use.
ARF1208/L5 Q-Band LNA
Altum RF’s ARF1208L5 is a packaged low-noise amplifier for Q- and V-band applications. With 28 dB of small signal gain and a typical noise figure of 3 dB, it is suitable for a wide variety of applications, including Satcom. When operated with a driver bias it is capable of delivering a PSAT of +19 dBm. ARF1208L5 operates with a single gate supply and a single drain supply. It is pre-matched to 50 ohm, ESD protected, and housed in a 5 x 5 mm² surface mount package to simplify handling and assembly.
- ARF1208: Bare Die
- ARF1208L5: 5 x 5 mm² surface mount package
International Microwave Symposium (IMS) 2024 will be held from 18 June 2024 – 20 June 2024. Daily hours of the event will be 18 June – 09:30-17:00; 19 June – 09:30-18:00; 20 June – 09:30-15:00.
Click here to learn more about everything RF's coverage on IMS 2024.
