WIN Semiconductors, the world’s largest pure-play compound semiconductor foundry, has expanded its portfolio of RF GaN technologies with the beta release of a highly robust mmWave gallium nitride (GaN) on silicon carbide (SiC) technology, NP12-0B. Core to this platform is a 0.12μm gate RF GaN HEMT technology incorporating multiple refinements to enhance DC and RF ruggedness and add die-level moisture resistance.
NP12-0B integrates multiple transistor improvements, providing high ruggedness when operated in deep-saturation/high-compression pulsed and CW conditions. This new rugged technology eliminates the pulse droop behavior observed in GaN HEMT power amplifiers thereby improving the range and sensitivity of pulsed mode radar systems. Additionally, NP12-0B is available with the Enhanced Moisture Ruggedness option and provides excellent humidity resistance when used in plastic packages.
Supporting full MMICs, the NP12-0B platform allows customers to develop compact pulsed or CW-saturated power amplifiers for applications through 50 GHz. This process is qualified for 28 V operation, and in the 29 GHz band generates a saturated output power of 4.5 watts/mm with 12 dB linear gain and over 40% power-added efficiency. The NP12-0B technology is ideal for rugged pulsed-mode high-power amplifiers used in advanced radar systems.
NP12-0B has reached beta release and is available for early access MPW runs. Qualification testing is complete and final modeling/PDK generation is expected to conclude in August 2024 with full production release scheduled for late Q3 ’24.
WIN Semiconductors Corp at the 2024 IEEE MTT-S International Microwave Symposium 2022, booth 531. WIN Semiconductors is showcasing its compound semiconductor RF and mm-Wave solutions in booth 531 at the 2024 IEEE International Microwave Symposium (IMS) being held at the Walter E. Washington Convention Center in Washington, DC, June 16th through June 21st.
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