United Monolithic Semiconductors (UMS) has introduced a new high-power amplifier designed to meet the growing demands of SATCOM uplink and 5G communication applications. The CHA6354-QQA is a GaN amplifier that offers 4 W of output power from 27.5 - 30 GHz showcasing impressive performance and efficiency. This three-stage monolithic GaN High Power Amplifier has an integrated Single Pole Double Throw (SPDT) switch at the output. This configuration not only enhances its functionality but also ensures high linearity and low power consumption, making it a prime choice for cutting-edge communication systems.
Manufactured using robust GaN-on-SiC HEMT technology, the CHA6354-QQA stands out for its durability and reliability. Both the input and output are internally matched to 50 Ohms, and the amplifier incorporates ESD RF protection, ensuring stable and secure operation in various environments. Designed for ease of use, this amplifier is available in a standard surface-mount 28-lead QFN 5x4 package. It is also RoHS compliant, reflecting UMS's commitment to environmental sustainability.
The introduction of the CHA6354-QQA reinforces United Monolithic Semiconductors' position as a leader in the semiconductor industry, providing state-of-the-art solutions for the evolving needs of global communication technologies.
Click here to learn more about this GaN Power Amplifier.
