![UMS Launches New 3-Stage GaN-on-SiC Medium Power Amplifier from 17.2 to 21.3 GHz](https://cdn.everythingrf.com/website/global/gray-svg-image.svg)
United Monolithic Semiconductors (UMS), a company that designs, manufactures and markets leading edge RF & millimeter-wave components and solutions for defense, security, and space, has announced the launch of its new product – the CHA4252-QKB. It is a three-stage medium power amplifier (MPA) that operates in the frequency range from 17.2 to 21.3 GHz. This MPA delivers an output power of 25 dBm with a small signal gain of 30 dB and a power-added efficiency (PAE) of 30%.
This power amplifier is a very versatile amplifier for high-performance systems and has been designed for space applications. It can also be integrated into a wide range of microwave applications and systems to provide sufficient drive for the RF components.
Output Power and Power-Added Efficiency (PAE) vs. Frequency
This MPA is fabricated on a robust GaN-on-SiC HEMT process. To ensure a nominal operation, the amplifier’s maximum temperature must be adjusted in order to guarantee that the junction temperature remains below the maximum value specified by UMS. It requires a DC supply of 14 V and consumes 0.015 A of current. This PA operates over a temperature range from -40°C to +85°C.
For the mounting process, standard techniques involving solder paste and a suitable reflow process can be used. It is available in a low-cost, surface-mount QFN package (leadless) that measures 4 mm x 4 mm.
Click here to learn more about this new three-stage medium power amplifier.