Wavepia Showcases GaN-on-SiC MMIC Power Amplifiers from S-band to Ka-band at EuMW 2024

Wavepia Showcases GaN-on-SiC MMIC Power Amplifiers from S-band to Ka-band at EuMW 2024

Wavepia Co. Ltd., a designer and developer of RFIC/MMIC products based in South Korea, is showcasing GaN-on-SiC MMIC power amplifiers from S-band to Ka-band at European Microwave Week 2024 (EuMW 2024). These amplifiers can be used across a wide range of applications including communications, radar and satellite.

Products on display at EuMW 2024:

  • WPGM3437020: 34 to 37 GHz GaN MMIC Power Amplifier delivering an output power of 43.4 dBm with a small-signal gain of 15.9 dB and a power gain of 8 dB. It has a power-added efficiency (PAE) of 13.3%.
  • WPGM0811015FS: GaN MMIC Front End Module with a switch, a low noise amplifier, and a power amplifier for X-Band frequencies from 8.5 to 10.5 GHz. It delivers a saturated output power of 43.6 dBm with a PAE of 27.7% for the TX path. In the Rx path, it delivers a saturated output power of 19.5 dBm and has a noise figure of 3.9 dB.
  • WPGM0204040M: 2.6 to 3.8 GHz GaN MMIC Power Amplifier delivering an output power of 47 dBm with a small-signal gain of 30.2 dB and a power gain of 25.1 dB. It has a power-added efficiency (PAE) of 53.9%.
  • WPGM0204200M: 2.6 to 3.8 GHz GaN MMIC Power Amplifier delivering an output power of 23.5 dBm with a small-signal gain of 26.8 dB and a power gain of 23.5 dB. It has a power-added efficiency (PAE) of 49.8%.

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Publisher: everything RF