UMS Introduces New GaN Monolithic Front-End IC from 37 to 41 GHz for 5G Applications

UMS Introduces New GaN Monolithic Front-End IC from 37 to 41 GHz for 5G Applications

United Monolithic Semiconductors, a company that designs, manufactures and markets leading edge RF & millimeter-wave components and solutions, has developed CHC6094-QKB, a multi-function monolithically packaged front-end microwave IC that operates in the 37-41 GHz band. This IC consists of a low noise high linearity amplifier, input/output switches and a linear efficient High Power Amplifier in a single compact package that suits well for 5G terrestrial networks, high-throughput Fixed Wireless Access (FWA) and phased array antennas.

This circuit is manufactured on a robust GaN-on-SiC HEMT technology. On the transmit channel, this IC includes SWin+PA+SWout chain that provides up to 2 W of output power and 23 dB of linear gain. The SWout+LNA+SWin chain on the receive channel provides a noise figure of 4.8 dB and a gain of 23 dB.

The CHC6094-QKB requires a DC supply of 12 V and consumes 40 mA of current. It is available in a standard 24-lead surface-mount package that measures 4 x 4 mm with internally matching to 50 Ohms on both the input and output ports. This eliminates any need to use separate RF matching networks to provide impedance matching, thereby saving valuable board space in the application. Additionally, a thermal pad is attached to this package to allow cooling of the device for maximum efficiency.

Click here to learn more about the CHC6094-QKB front-end microwave IC.

Publisher: everything RF