Ampleon has launched its latest power transistor, the C4H22P400A, a 400W GaN (Gallium Nitride) packaged asymmetric Doherty power transistor. This RoHS compliant component is designed specifically for RF power amplifiers in base stations and multi-carrier applications, supporting frequencies from 1800 to 2200 MHz.
The C4H22P400A delivers an output power of 400 W with a power gain of 16 dB and a drain efficiency of 60.1%. This transistor has an adjacent channel power ratio (ACPR) of -30 dBc with exceptional pre-distortion capability. It has lower output capacitance for improved performance in Doherty applications and is internally matched to 50 Ohms for ease of use. This RF transistor requires a drain-source voltage of 48 V and consumes 80 mA of quiescent drain current. It is available in an SMT plastic package and is ideal for base stations and multi-carrier applications.
The C4H22P400A transistor boasts several cutting-edge features aimed at enhancing performance and efficiency:
- Excellent Digital Pre-Distortion Capability: Ensures signal clarity and reduces distortion in high-power applications.
- High Efficiency: Optimized for energy efficiency, making it suitable for base stations that require continuous high power.
- Broadband Operation: Designed to support a wide frequency range, allowing flexibility for various RF applications.
- Lower Output Capacitance: This improvement is especially beneficial for Doherty power amplifier designs, boosting overall performance.
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