Withwave Introduces New CMOS SOI-Based MEMS Reflective Switch Products from DC to 20 GHz

Withwave Introduces New CMOS SOI-Based MEMS Reflective Switch Products from DC to 20 GHz

Withwave has introduced a new series of reflective RF switches (WM418NKU, WM1018NKU, and W4MS-NKU) that deliver high power handling capabilities, low insertion loss, and high linearity in compact packages, making them ideal for RF signal routing in wireless infrastructure and other wireless applications. They are operate from DC to 20 GHz and are available in SP4T, SP10T, and a 4-port matrix configuration.

These new switches are manufactured using CMOS SOI technology and utilize MEMS technology, ensuring high reliability with support for over 3 billion switching operations. They can handle a CW input power of 9 W, provide an isolation of 30 dB, and has an insertion loss of 1.5 dB. These switches have a switching time of 200 µs, and a return loss of 8 dB. They also offer hot switching operations in DC and RF mode up to 15 dBm.

The reflective switches can be powered and controlled via a USB Type-C connector. They require a DC supply voltage of 5 V and consume 85 mA of current. These switches are available in modules with 2.92 mm vertical launch connectors for all the RF ports. The switches also have ESD HBM protection.

Click here to learn more about Withwave's new MEMS reflective switches.

Publisher: everything RF