India’s Solid State Physics Laboratory (SSPL), part of the Defence Research and Development Organisation (DRDO), has developed indigenous processes for manufacturing 4-inch silicon carbide (SiC) wafers and fabricating high-electron-mobility transistors (HEMTs) based on gallium nitride (GaN). This innovative GaN-on-SiC technology supports applications up to X-band frequencies, producing up to 150W in transistors and 40W in monolithic microwave integrated circuits (MMICs).
The GaN/SiC technology is poised to revolutionize next-generation applications across defense, aerospace, and clean energy by offering increased efficiency, reduced size and weight, and enhanced system performance. DRDO notes that this advancement is essential for the future of combat systems, radar, and electronic warfare. The demand for more compact, lightweight, and powerful power supplies is driving the adoption of GaN/SiC solutions, which are equally beneficial for both military and commercial sectors, including electric vehicles and renewable energy.
In Hyderabad, the Gallium Arsenide Technology Enabling Centre (GAETEC) has established limited production capabilities for GaN-on-SiC-based MMICs. These multifunctional circuits are designed to meet the needs of next-generation systems, including space, aerospace, and 5G and satellite communications, reflecting India’s ongoing strides toward ‘Aatmanirbhar Bharat’ and fostering self-reliance in semiconductor technology.
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