United Monolithic Semiconductors Introduces 5 W GaN-on-SiC Power Amplifier from 17 to 21.5 GHz

United Monolithic Semiconductors Introduces 5 W GaN-on-SiC Power Amplifier from 17 to 21.5 GHz

United Monolithic Semiconductors (UMS) has introduced the CHA6251-QKB, a three-stage power amplifier that operates in the frequency range from 17 to 21.5 GHz. It can deliver output power anywhere between 33 dBm to 37 dBm depending on the bias point with a linear gain of more than 30 dB and a power-added efficiency (PAE) of 42%. The CHA6251-QKB is manufactured using robust GaN-on-SiC HEMT process incorporating monolithic technology. This amplifier requires a DC supply of 14 V and consumes 125 mA of current. It is available in a 24-lead surface-mount QFN package that measures 4 x 4 mm. This power amplifier is RoHS-compliant and is rated to moisture sensitivity level 3 (MSL3) standard.

This amplifier has been designed primarily for space applications but it can also be used in a wide array of microwave systems. It is also provided with an evaluation board that is compatible with the proposed footprint, and uses a microstrip to coplanar transition to access the package for testing purposes.

Click here to learn more about the new CHA6251-QKB 5 W power amplifier.

Publisher: everything RF
Tags:-   Power AmplifierAmplifierGaNSiC