Analog Devices has introduced a suite of high-performance RF and microwave components in 2024, pushing the boundaries of innovation in radar, communication, and defense systems. Here’s a summary of few of the latest offerings:
2 GHz to 6 GHz, 46 dBm (40 W), GaN Power Amplifier
The ADPA1113 from Analog Devices is a GaN Power Amplifier that operates from 2 to 6 GHz. It delivers an output power of 40 W (46 dBm) with a small signal gain of 40.5 dB and a power-added efficiency (PAE) of 39%. This amplifier is based on GaN technology and is ideal for continuous wave applications, such as military jammers and radars. It does not require external matching or AC coupling to achieve full-band operation and no external inductor is required to bias the amplifier. This power amplifier requires a DC supply of 28 V and consumes a quiescent current of 750 mA. The amplifier is available in a 14-lead LDCC package that measures 9.8 x 8.2 mm. Click here to learn more.
0.3 GHz to 6 GHz, 39.5 dBm, GaN Power Amplifier
The ADPA1116 from Analog Devices is a GaN Power Amplifier that operates from 0.3 to 6 GHz. It delivers a saturated output power of 39.5 dBm (~8.9 W) with a small signal gain of 33.5 dB and a power-added efficiency (PAE) of 40 %. This amplifier has internally matched RF input and output ports with AC coupling and an integrated drain bias inductor.
The ADPA1116 requires a DC supply of 28 V and is available in a 32-lead LFCSP package that measures 5 x 5 x 1.2 mm. This GaN amplifier is ideal for electronic warfare, communications, and radar applications. Click here to learn more.
30 kHz to 20 GHz, Ultra-Wideband, Low Noise Amplifier
The ADL8120 from Analog Devices is a Low Noise Amplifier (LNA) that operates from 30 kHz to 20 GHz. It delivers 15 dB of gain with a noise figure of less than 2.3 dB and has a saturated output power of up to 17.5 dBm. This LNA has a power-added efficiency (PAE) of 20.5%and provides a return loss of 8-15 dB. It is fabricated on a pseudomorphic high electron mobility transistor (pHEMT) process and has a resistor programmable bias setting.
This LNA has internally matched, DC-coupled RF input and output pins that require external AC coupling capacitors along with a bias inductor on the RF output pin. The RF input is biased through an external inductor connected between the bias voltage pin and the RF input pin. It requires a DC supply of 3.3 V and consumes less than 55 mA of current. This amplifier is available in an RoHS-compliant LFCSP package that measures 2 x 2 mm and is ideal for telecommunications, instrumentation, radar and electronic warfare applications. Click here to learn more.
10 kHz to 22 GHz, Ultrawideband, Low Noise Amplifier
The ADL8101 from Analog Devices is a Low Noise Amplifier (LNA) that operates from 10 kHz to 22 GHz. It delivers 14 dB of gain with a noise figure of up to 3.8 dB and has a saturated output power of up to 18 dBm. This LNA has a power-added efficiency of up to 8.66% and a return loss of 10-17 dB. It is fabricated on a pseudomorphic high electron mobility transistor (pHEMT) process and has a resistor programmable bias setting.
This LNA is internally matched and has DC-coupled RF input and output pins that require external AC coupling capacitors along with a bias inductor on the RF output It requires a DC supply of 5 V and consumes less than 90 mA of current. This amplifier is available in an RoHS-compliant 8-lead LFCSP package that measures 2 x 2 x 0.85 mm and is ideal for telecommunications, instrumentation, radar, and electronic warfare applications. Click here to learn more.
5.9 GHz to 23.6 GHz, Wideband, Microwave Upconverter
The ADRF6780S from Analog Devices is a SiGe Microwave Up-Converter that converts IF inputs from 0.8–3.5 GHz to RF outputs ranging from 5.9–23.6 GHz. It integrates a quad splitter buffer, log power detector, LO doubler, voltage variable attenuator, ADC, bias control, and SPI interface. It supports two modes: direct RF conversion from baseband I/Q signals and SSB upconversion from a real IF input.
This upconverter delivers an output P1dB of 11.5 dBm, 12 dB return loss, and 25 dBc sideband suppression. Its high-impedance baseband inputs use off-chip 100-Ohm differential termination. Designed for aerospace applications, it includes TID radiation monitoring and outgassing characterization. The built-in SPI interface allows Quadrature phase adjustment for sideband suppression. Requiring a 3.3 V DC supply and consuming <40 mA, the ADRF6780S comes in a compact 5x5 mm chip-scale package. It's ideal for LEO/MEO satellites, avionics, radar/EW systems, and point-to-point microwave radios. Click here to learn more.
9 kHz to 20 GHz, Nonreflective, Silicon SPDT Switch
The ADRF5031 from Analog Devices is a Silicon SPDT Non-reflective switch that operates from 9 kHz to 20 GHz. It has a switching speed of 3 us, provides an isolation of 45 dB and an insertion loss of less than 1 dB. This silicon switch can handle an input power of 33 dBm (~2 W), a peak input power of 35 dBm (~3.16 W), and has a return loss of 17 to 22 dB. It employs complementary metal-oxide semiconductor (CMOS)-/low-voltage transistor to transistor logic (LVTTL)-compatible controls and does not require additional driver circuitry, making it an ideal alternative to GaN and PIN diode-based switches.
The ADRF5031 requires DC supplies of +3.3 and -3.3 V and consumes 150 µA (positive supply) and 520 µA (negative supply) of current. This RoHS-compliant switch is available in a 20-terminal LGA package that measures 3 × 3 mm. It is ideal for test instrumentation, military radios, radars, electronic counter measures (ECMs), microwave radios, and very small aperture terminals (VSATs) applications. Click here to learn more.
Silicon SPST Switch, NonReflective, 100 MHz to 55 GHz
The ADRF5010 from Analog Devices is a Silicon SPST Non-reflective Switch that operates from 100 MHz to 55 GHz. It has a switching speed of 30 ns, provides an isolation of 30 dB, and an insertion loss of less than 2 dB. This switch can handle an input power of up to 30 dBm (~1 W), a peak input power of 36 dBm (~4 W), and has a return loss of 19 to 22 dB. It supports complementary metal-oxide semiconductor (CMOS) & low-voltage transistor-transistor logic (LVTTL) compatible controls.
The ADRF5010 requires DC supplies of +3.3 and -3.3 V and consumes 140 µA (positive supply) and 500 µA (negative supply) of current. This RoHS-compliant switch is available in a 14-lead LGA package that measures 2.5 x 2.2 mm. It is ideal for is ideal for test and instrumentation, cellular infrastructure: 5G mmWave, military radios, radars, electronic countermeasures, microwave radios, very small aperture terminals, and industrial scanner applications. Click here to learn more.
High Power, 100 W Peak, Silicon SPDT, Reflective Switch, 0.4 GHz to 8 GHz
The ADRF5162 from Analog Devices is a Silicon SPDT Reflective Switch that operates from 0.4 GHz to 8 GHz. It has a switching speed of 800 ns, provides an isolation of 45 dB and an insertion loss of less than 0.8 dB. This reflective switch can handle an input average power of 45.5 dBm (~35.5 W), a peak input power of 50 dBm (100 W) and has a return loss of greater than 20 dB. It employs complementary metal-oxide semiconductor (CMOS)-/low-voltage transistor to transistor logic (LVTTL)-compatible controls and does not require additional driver circuitry, making it an ideal alternative to GaN and PIN diode-based switches.
The ADRF5162 requires DC supplies of +3.3 and -3.3 V and consumes 130 µA (positive supply) and 500 µA (negative supply) of current. This RoHS-compliant switch is available in a 24-lead LFCSP package that measures 4.0 x 4.0 x 0.85 mm. It is ideal for military radios, radars, electronic countermeasures, cellular infrastructure, test & instrumentation, and GaN & PIN diode replacement applications. Click here to learn more.
8T8R SoC with DFE, 400 MHz iBW RF Transceiver
The ADRV9040 RF Transceiver SoC from Analog Devices operates from 650 to 6000 MHz, designed for cellular infrastructure, including small cells, macro 3G/4G/5G, and massive MIMO. It features eight Tx/Rx paths, two observation receivers, LO and clock synthesizers, and a digital front end (DFE) for tasks like digital up/down conversion, crest factor reduction, and digital pre-distortion (DPD), optimizing power efficiency and reducing baseband load.
The SoC includes observation receivers for attenuation control, quadrature error correction, and digital filtering, with an integrated DPD engine to enhance PA efficiency. Consuming 13 W, it is powered by 1.0, 1.3, and 1.8 V regulators, controlled via an SPI interface, and housed in a 27 x 20 mm BGA package. Click here to learn more.
10 GHz to 40 GHz, 2-Way RF Splitter Combiner
The ADAR5001 from Analog Devices is a 2-Way Wilkinson Power Splitter that operates from 10 to 40 GHz. It can handle an input power of up to 34 dBm, provides an isolation of up to 23 dBm and has an insertion loss of less than 2 dB. This power splitter is designed for space-constrained microwave signal distribution applications and can also be used as a combiner. It is fabricated on a passive silicon process and the two outputs are matched in both phase and amplitude, making the ADAR5001 ideal for signal distribution applications requiring low time skew between channels. This power splitter is available in a wafer-level chip-scale package (WLCSP) that measures 1.46 x 1.46 x 0.50 mm and is suitable for general-purpose microwave signal distribution, phased-array satellite communication (SATCOM) systems and phased-array radar systems. Click here to learn more.
Click here to see all new products introduced by Analog Devices' in 2024.
