Arralis, a company that builds technology and products for satellite communication, has launched its new Leonis series GaN-SiC High Power Amplifier (HPA) optimized for satellite downlink communication systems. The HPA operates in the K-band from 17.5 to 20 GHz and delivers a saturated power in excess of 10 Watts with typical power added efficiency of 25% and large signal gain of 20 dB in a compact die size of 3.6 x 2.9 mm. The part is matched to 50 ohms with integrated DC blocking capacitors on RF ports and incorporates an output power detector to assist with system integration. Nominal drain bias is 25V.
The HPA is fabricated on ITAR free, space qualified UMS 0.25um GH25-10 GaN-SiC process. GaN devices have higher efficiencies, power density, and thermal conductivity compared to equivalent GaAs parts, and can operate at higher temperatures without loss of reliability. Optimum performance has been achieved at K-band through a combination of UMS device models, NI AWR EDA software and the design expertise of the Arralis MMIC team.
The Leonis chipset was developed to meet the needs of the growing demand for low-cost K/Ka-band satellite equipment that is simple to interface with current digital internet hardware. Applications include 5G communications, airborne high-speed Wi-Fi, low earth orbit mega constellation communications, drone constellations and SAT-Drone-Ground data networks, satellite to automotive connectivity, connected vehicles, last mile and remote internet solutions, IoT and M2M communications.
The part is available as a bare die MMIC or in a preassembled evaluation board. Arralis will be showcasing this new device at Paris Space Week on 2-3 April 2019. Click here to learn more about this chipset.
