Altum RF, a new fabless semiconductor company that is designing high-performance millimeter-wave to digital solutions for next generation markets and applications will be exhibiting at IMS 2019 in Boston, Massachusetts from June 4-6, 2019. At their booth, customers can learn more about their products, including the ARF1307C7, a 2-20 GHz GaN distributed amplifier that delivers 10W of saturated output power, and the ARF1202Q2, a 39 GHz low noise amplifier for 5G millimeter-wave infrastructure.
Altum RF’s ARF1307C7 is a packaged GaN distributed amplifier for applications from 2 to 20 GHz. The amplifier provides 20 dB small signal gain, 10 W saturated output power with 14 dB of power gain and 25% power added efficiency. The ARF1307C7 features a robust, lead-free and RoHS-compliant 7 x 7 mm ceramic QFN package with excellent thermal and electrical properties.
The ARF1307 is suitable for higher performance commercial and defense-related applications, such as test & measurement equipment, EW, and commercial or defense radar systems.
The ARF1202Q2 is a low noise amplifier designed for high data-rate applications. With 19 dB of linear gain, 2.4 dB noise figure, and low-current operation, it is well suited to demanding, high-order modulation schemes such as millimeter-wave 5G. The circuit draws 15 mA from a 3.3 V DC supply. The part is internally matched to 50 Ω with ESD protection. RF ports are DC grounded. A VBIAS pin can be connected to the 3.3 V supply, or connected to ground to power down the device.
The part is RoHS compliant and built with the latest manufacturing techniques for reliability and quality control.
Altum RF will also Conduct a MicroApps Session
THMA61: Broadband millimeter-wave power – making the most of III-V technology
Speaker: Tony Fattorini
Location: Booth 200
Time: Thursday, June 6, 12:45 pm
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