MACOM will showcase its leading GaN-on-Silicon (GaN-on-Si) portfolio, millimeter wave portfolio, and other high-performance MMIC and diode products at IEEE’s International Microwave Symposium (IMS) 2019, in Boston, Massachusetts from 4 – 6 June. MACOM’s booth will feature new product offerings optimized for 5G connectivity, wireless base stations, radar, test and measurement, industrial, cooking, scientific and medical RF applications.
Visit MACOM at IMS Booth #532 to learn more about:
- High-Performance RF Components: High-performance RF amplifiers, switches, mixers, limiters, NLTL comb generators, power detectors, Attenuators, diodes and transistors serving diverse markets including mmW connectivity, test, and measurement, satellite, radar, milcom, wired and wireless networks, automotive, industrial, medical and mobile devices
- 5G Connectivity: High-performance and reliable discrete components and HMICs for 4GLTE and 5G Telecom
- RF Energy: MACOM’s GaN-on-Si portfolio delivers critical performance parameters such as power density, gain, and efficiency to enable RF Energy applications
- Homeland Security: MACOM’s SPAR™ Tiles and phased array technology allows each element of radar to operate in concert, creating highly agile and narrowly-focused beams
Members of MACOM’s product management, engineering and applications teams will be available at Booth #532 to answer any questions.
MACOM experts will also be participating in various sessions throughout IMS, including:
- 5G Summit: Sub 6 GHz 5G mMIMO Design Challenges
- Presenter: Walter Honcharenko
- Date: Tuesday, June 4th
- Location: BCEC, Room 160ABC
- Session Chair: Tu1C Advances in Material Characterization and Processing
- Presenter: Freek van Straten
- Date: Tuesday, June 4
- Time: 8:00 AM – 9:40AM
- Location: BCEC, 156AB
Click here to see IMS 2019 event coverage by everything RF.
