This article lists the most popular Amplifiers, Transistors and Front End Modules on everything RF from 2013. This year has been all about High Power and new technologies such as Gallium Nitride (GaN) and LDMOS. On everything RF Skyworks, RFMD, RFHIC and TriQuint dominated the cellular mobile and cellular space. Empower RF and OphirRF were the leaders in High power amplifiers. Miteq, Hittite and MACOM were most popular for military and defense applications.
Most Popular Amplifiers, Transistors and Front End Modules in 2013
Broadband Low Noise Amplifier for Ka Band Applications
The ALO/400-5515 is a broadband low noise amplifier that operates in the Ka-Band from 17 to 40 GHz. It has been designed to meet the MIL-STD-883 standard and can provide a gain of 15 dB, P1dB of 6 dBm and Noise Figure below 5.5 dB. It requires a 12 V DC supply and draws 210 mA of current. The amplifier is available in a module with SMA, 2.9mm or K Type Female connectors.
0.7 to 3.8 GHz Ultra Low-Noise Amplifier for Macro & Micro Cellular Basestations
The SKY67151-396LF is a 0.7 to 3.8 GHz low noise amplifier with a noise figure of under 0.5 dB over a 2 GHz bandwidth. The LNA is ideal for both Macro & Micro Cellular Basestations, Repeaters, Remote Radio Heads, Tower Mounted Amplifiers, L & S Band Military Communication, GPS receivers and Proprietary Radio Networks. The advanced 0.25um GaAs pHEMT enhancement mode process provides broadband return loss, high gain, very low noise, and high amplifier linearity. The internal active bias circuitry provides stable performance over temperature and process variation. The device offers the user the ability to externally adjust supply current to optimize linearity and provides best in class noise figure. Supply voltage is applied to the RFOUT/VDD pin and RFIN pin through an RF choke inductor. Also the VBIAS pin is connected to VDD supply through an external resistor to control the supply current. The RFIN and RFOUT/VDD pins should be DC blocked to ensure proper operation. The SKY67151-396LF is available in a 2 x 2 mm, 8-pin Dual Flat No-Lead (DFN) package.
1000 W high power broadband amplifier that operates from 20 to 1000 MHz
The BBS3K4AUT (SKU 2162) is a 1000 W high power amplifier that operates from 20 to 1000 MHz. It is suitable for ultra broadband high power CW, modulated, and pulse applications. This amplifier utilizes high power LDMOS devices that provide wide frequency response, high gain, high peak power capability, and low distortions. Exceptional performance, long-term reliability and high efficiency are achieved by employing advanced broadband RF matching networks and combining techniques, EMI/RFI filters, and all qualified components. The amplifier is constructed within one single 5RU drawer including the forced air-cooling. The system can be ordered to operate from 180-260VAC single phase or optionally from a three phase AC supply.
GaN Ka-Band, 5 W Power Amplifier
The TGA2594 from TriQuint is a Ka-Band GaN (Gallium Nitride) Amplifier that operates from 27 to 31 GHz with a saturated power of 5 W (37 dBm) and a gain of 19 dB. It operates on a supply voltage of 20 V with a current of 280 mA. It is available in a Die form factor.
1 to 500 MHz, 20 dB, 21 dBm, E-pHEMT, Hybrid LNA for Radio Systems and Satellite Applications
The WL0510 from RFHIC is a E-pHEMT, hybrid amplifier which operates from 1 to 500 MHz. It provides up to 21 dBm of power (P1dB), a gain of 20 dB with a flatness of 1.5 dB and a noise figure of 1.7 dB. It requires a supply voltage of 5 V and consumes 100 mA of current. The WL0510 is ideal for CATV, radio systems and satellite applications. It is available in a surface mount package.
Low Noise High Linearity Amplifier for Cellular, PCS, LTE, WiMAX Applications
The PGA-103+ is a Broadband E-PHEMT amplifier that operates from DC to 4 GHz, covering the primary wireless communication bands – Cellular, PCS, LTE, WiMAX. It provides a gain of 11 dB, a P1dB of over 22.5 dBm and a low noise figure below 0.9 dB. The amplifier has a high linearity and dynamic range. The PGA-103+ has a good output and input return loss through the band and thus does not require external matching components. It is available in a SOT-89 Package and can be used as a replacement for the SPF-5189Z from RFMD.
10 Watt Amplifier for High Power, 0.5-3.0 GHz Broadband Applications
The MAAP-010168 is a two staged amplifier operating between the 500 MHz to 3.0 GHz frequency range. The device is fully matched for input and output at 50O, which eliminates the customers need for any sensitive external RF tuning components. This amplifier has excellent efficiency and gain, providing a high power off-the shelf solution. It is ideal for WiMAX, VSAT, RFID, Bluetooth, GPS, CDMA, CATV Applications.
3V WCDMA Band 1 (1920 to 1980 MHz) Linear PA Module
The RF7241 is a high-power, high-efficiency, linear power amplifier designed for use as the final RF amplifier in WCDMA mobile cellular equipment and spread-spectrum systems that operate from 1920 to 1980 MHz. The RF7241 has three power modes to optimize performance and current drain at lower power levels. It also has an integrated directional coupler which eliminates the need for an external discrete coupler at the output. The amplifier meets the spectral linearity requirements of High Speed Downlink Packet Access (HSDPA), High Speed Uplink Packet Access (HSUPA), and Long Term Evolution (LTE) data transmission and is available in a 10-pin, 3mm x 3mm module.
2.4 GHz, 802.11 WLAN front-end module (FEM) with a Bluetooth® Port
The SKY85302-11 from Skyworks is a 802.11 WLAN front-end module (FEM) with a Bluetooth® port which operates at 2.4 GHz. The device consists of a matched power amplifier, power detector, harmonic filter, low noise amplifier and a single pole three pole switch. This is the complete RF solution from the output of the transceiver to the antenna, and from the antenna to the input of the transceiver. The LNA increases the receive (Rx) sensitivity of embedded solutions to improve range. The FEM is available in a compact QFN package that measures 2.5 x 2.5 x 0.45 mm.
Front End Module for Smart Energy/advanced metering infrastructure (AMI) Applications
The RFFM6903 is a Front End Module designed for Smart Energy/advanced metering infrastructure (AMI), portable battery-powered equipment, and general 868/915MHz ISM band systems. It integrates a 30.5 dBm power amplifier with a harmonic filter in the transmit path, Tx path bypass mode with harmonic filter, and a low-noise amplifier (LNA) with bypass mode in the receive path. The RFFM6903 also includes a low insertion loss, high isolation, single-pole three-throw (SP3T) switch and separate Rx/Tx 50 ohm ports that simplify matching and provide input and output signals for both the Tx and Rx paths. In the receive path, the Rx chain provides 16dB of typical gain with only 5mA of current and an excellent noise figure of 1.7dB. It is available in a 6mm x 6mm x 1mm laminate package.
DC to 3.3 GHz, 200 W Transistor
The T1G4020036-FL is a 200 W GAN transistor which operates from Dc to 3.3 GHz. It provides 56 dBm of saturated power with an efficiency of 50% and a gain of 13 dB. The T1G4020036-FL requires a 36 V supply and draws 720 mA of current. It is ideal for commercial and defense systems. It is available in a flanged ceramic package.
500 W, 1200 - 1400 MHz, GaN HEMT for L-Band Radar Systems
The CGHV14500 from Cree is a GaN high electron mobility transistor(HEMT) ideally used for L-band radar amplifier applications. It operates from 1.2 to 1.4 GHz, can provide output power of 500 W, has a gain of 17 dB and a drain efficiency of 70%. The package options are ceramic/metal flange and pill package.
Also See:
Popular Passive Components, Mixers, Baluns and VCOs in 2013
Top 10 Test & Measurement Products in 2013
