1. everything RF
  2. RF Components
  3. Oscillators
  4. Gunn Diode Oscillators
  5. Spacek Labs
  6. GE-XXX-MT

GE-XXX-MT

Gunn Diode Oscillator by Spacek Labs (10 more products)
Download Datasheet
Request Quote

Note : Your request will be directed to Spacek Labs.

The GE-XXX-MT from Spacek Labs is a Gunn Diode Oscillator with Frequency 60 to 90 GHz, Bandwidth 1000 MHz, Output Power 0.05 W, Bias Current 0.7 to 1.3 A, Bias Voltage 4 V. More details for GE-XXX-MT can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    GE-XXX-MT
  • Manufacturer
    Spacek Labs
  • Description
    60-90 GHz Mechanically-Tuned Gunn Oscillator

General Parameters

  • Frequency
    60 to 90 GHz
  • Bandwidth
    1000 MHz
  • Frequency Stability
    5 MHz/Degree C
  • Output Power
    0.05 W
  • Tuning Type
    Mechanically Tuned
  • Power Stability
    -0.04 dB/Degree C
  • Finish
    Gold Plate
  • Bias Current
    0.7 to 1.3 A
  • Bias Voltage
    4 V
  • Waveguide
    WR-12
  • Flange
    UG-387/U
  • Material
    Brass
  • Weight
    121.905 g
  • Operating Temperature
    -55 to 71 Degree C
  • Storage Temperature
    -55 to 125 Degree C
  • Transistor Technology
    GaAs

Technical Documents
View details on the manufacturer's website
View similar products